| 摘要 |
PURPOSE:To simplify the design and production of the multilayer semiconductor device by dividing the whole circuit into circuit block aggregates, distributing the aggregates to each layer forming the semiconductor device and mutually connecting the input/output terminals of the circuit block aggregates through an interlayer insulating film. CONSTITUTION:An Si substrate 21 is isolated by a thick SiO2 film 22, and a FET (a first layer element region 37) with source-drain 23 and a gate 25 is formed, and drawn out onto the SiO2 22 by metallic wiring 27. An FET (a second layer element region 38) with source-drain 31 and a gate 34 is shaped through the layer insulating film 28, and drawn out onto an SiO2 35 by metallic wiring 36, an opening 29 is molded to the interlayer insulating film section with no element, a conductor 30 is buried and layer-connected, and a metal or a semiconductor is used as the material 30. According to this constitution, sections except a connecting section between the input/output terminals 26, 27 are manufactured through the same design as a normal pattern one, connection is also simple, and the number of holes 29 for connection is largely decreased. |
