| 摘要 |
PURPOSE:To obtain an Si layer having large mobility extending over the large area at a semiconductor device without generating stress by a method wherein after a polycrystalline Si film is formed on an insulating substrate, a beam having high energy density is irradiated thereto to make the Si film to be molten and to enlarge grain size, and an epitaxial layer is made to grow thereon. CONSTITUTION:An SiO2 film 2 is adhered on the Su substrate 1 formed with the first layer element, and the polycrystalline Si layer 3 having thickness of 0.1mum or less is accumulated thereon. Then the high energy beam 4 of laser, etc., is irradiated thereto to convert the thin film 3 into the Si film 5 having favorable crystallinity and large grain size. After then, the Si layer 6 is made to grow epitaxially thereon. The layer 3 is converted into the single crystal having large grain size by this way, the epitaxial layer is made to grow thereon, and is made as suitable for formation of the three dimentional IC. |
