摘要 |
PURPOSE:To obstruct an abnormal current to flow from another back up electric power source by a method wherein a diode is integrated in the forward direction viewed from the electric power source terminal side, and moreover in series between the electric power source terminal and the CMOS inside circuit of the CMOS.IC. CONSTITUTION:A P channel transistor 7 and an N channel transistor 9 are formed on a semiconductor substrate 6. At this time, a diode 11 is integrated in the forward direction viewed from an electric power source terminal VCC side, and moreover in series between the terminal VCC and the high electric potential side of the transistor 7. Accordingly when the circuit is formed in multiprocessor structure, and the electric power source on one side only is to be cut, the abnormal current to be flowed is obstructed by the diode 11. |