| 发明名称 |
Group-III-element nitride crystal semiconductor device |
| 摘要 |
In a Group-III-element nitride semiconductor device including a Group-III-element nitride crystal layer stacked on a Group-III-element nitride crystal substrate, the substrate is produced by allowing nitrogen of nitrogen-containing gas and a Group III element to react with each other to crystallize in a melt (a flux) containing at least one of alkali metal and alkaline-earth metal, and a thin film layer is formed on the substrate and the thin film has a lower diffusion coefficient than that of the substrate with respect to impurities contained in the substrate. The present invention provides a semiconductor device in which alkali metal is prevented from diffusing.
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| 申请公布号 |
US7227172(B2) |
申请公布日期 |
2007.06.05 |
| 申请号 |
US20040969791 |
申请日期 |
2004.10.19 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KITAOKA YASUO;MINEMOTO HISASHI;KIDOGUCHI ISAO;TSUKAMOTO KAZUYOSHI |
| 分类号 |
C30B1/00;B32B9/00;H01L21/20;H01L21/205;H01L21/208;H01L21/26;H01L21/324;H01L21/335;H01L21/42;H01L29/15;H01L29/20;H01L33/02;H01L33/32;H01S5/00 |
主分类号 |
C30B1/00 |
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