Non-outgassing low activation energy resist

摘要

Numerous embodiments of a method to prevent outgassing from a low activation energy photoresist are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist layer includes branched polymers coupled with acetal or ketal linkages. An exposed portion of the photoresist layer is exposed to a radiation treatment to cleave the acetal or ketal linkages and separate the branched polymers. The photoresist layer is baked at a temperature below about 100° C., and the separated branched polymers are too large to outgass from the photoresist layer.