| 摘要 |
A method for manufacturing a metal line of a semiconductor device is provided to maximize the speed of the device by reducing resistance of the metal line without the adjustment of thickness and width of the metal line. A first metal film(20) is formed on a wafer. The first metal film is selectively etched. A first copper barrier metal, a copper seed layer and a copper film(50) are sequentially formed on the first metal film. An annealing process is performed on the resultant structure. A polishing process is performed on the resultant structure until the first metal film is exposed to the outside. The first metal film and the first copper barrier metal are partially etched. A second copper barrier metal(70) is formed thereon. A second metal film is deposited on the resultant structure. The second metal film and the second copper barrier metal are selectively etched. An interlayer dielectric is formed and performed with CMP(Chemical Mechanical Polishing). |
