Semiconductor device having multiple work functions and method of manufacture therefor

摘要

The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device ( 100 ), among other possible elements, includes a first transistor ( 120 ) located over a semiconductor substrate ( 110 ), wherein the first transistor ( 120 ) has a metal gate electrode ( 135 ) having a work function, and a second transistor ( 160 ) located over the semiconductor substrate ( 110 ) and proximate the first transistor ( 120 ), wherein the second transistor ( 160 ) has a plasma altered metal gate electrode ( 175 ) having a different work function.