发明名称 |
Silicon wafer cleaning method |
摘要 |
This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/mum is 0.3 to 1.5 nm<SUP>3 </SUP>in terms of power spectrum density, by passing a process of oxidizing the silicon wafer with ozonized water and a process of cleaning said oxidized silicon wafer with hydrofluoric acid. Consequently, it is possible to remove surface adhering pollutant such as particles and metallic foreign matter with the surface structure of silicon wafer flattened up to atomic level by annealing maintained.
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申请公布号 |
US7226513(B2) |
申请公布日期 |
2007.06.05 |
申请号 |
US20030645911 |
申请日期 |
2003.08.22 |
申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
KURITA HISATSUGU;HIRASAWA MANABU;NAGAHAMA HIROMI;IZUMOME KOJI;INO TAKAO;YAMABE JYUNSEI;HAYAMIZU NAOYA;SAKURAI NAOAKI |
分类号 |
B08B3/00;H01L21/304;B08B3/08;C11D7/02;C11D7/08;C11D11/00;H01L21/306 |
主分类号 |
B08B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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