发明名称 |
Nitrogen controlled growth of dislocation loop in stress enhanced transistor |
摘要 |
Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.
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申请公布号 |
US7226824(B2) |
申请公布日期 |
2007.06.05 |
申请号 |
US20040918818 |
申请日期 |
2004.08.12 |
申请人 |
INTEL CORPORATION |
发明人 |
WEBER CORY E.;ARMSTRONG MARK;KENNEL HAROLD;GHANI TAHIR;PACKAN PAUL A.;THOMPSON SCOTT |
分类号 |
H01L21/338;H01L21/265;H01L21/8238;H01L29/78 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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