发明名称 |
Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device |
摘要 |
Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crystal growth rate, the supply of crystal growth source material and/or the crystal growth area can be varied over time, thus resulting in a nitride semiconductor device with enhanced properties.
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申请公布号 |
US7227189(B2) |
申请公布日期 |
2007.06.05 |
申请号 |
US20040868313 |
申请日期 |
2004.06.15 |
申请人 |
SONY CORPORATION |
发明人 |
BIWA GOSHI;OKUYAMA HIROYUKI;DOI MASATO;OOHATA TOYOHARU |
分类号 |
C30B25/02;C30B29/40;H01L21/00;H01L21/20;H01L21/205;H01L31/0336;H01L33/00;H01L33/20;H01L33/32;H01L33/40;H01S5/323;H01S5/343 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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