Current source architecture for memory device standby current reduction

摘要

A memory device ( 200 ) can include a memory cell block ( 202 ), a standby current source ( 206 ), an active current source ( 208 ), and a clamping device ( 212 ). In a standby mode, a standby current source ( 206 ) can provide constant standby current I_STBY to memory cell block ( 202 ) via block supply node ( 204 ). In an active mode, active current source ( 208 ) can provide current to accommodate current necessary for active operations (e.g., accessing the memory cell block). A clamping circuit ( 212 ) can provide additional current in the event a block supply node ( 204 ) potential VCCX collapses due to the presence of micro-defects. In addition, compensation for process variation can be achieved by a self regulating well ( 454 ) to source ( 404 ) back bias that can modulate the threshold voltage of p-channel transistors of memory cells within the well ( 454 ), reducing overall leakage.