发明名称 Method for forming pattern of organic insulating film
摘要 A method for forming a pattern of an organic insulating film by forming an electrode on a substrate, coating an imprintable composition thereon to form an organic insulating film, pressurizing and curing the organic insulating film using a patterned mold to transfer a pattern of the mold to the organic insulating film, and etching a portion of the organic insulating film remaining on the electrode. Since a pattern of an organic insulating film can be formed by simple molding without the use of a photoresist, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.
申请公布号 US7226804(B2) 申请公布日期 2007.06.05
申请号 US20050195694 申请日期 2005.08.03
申请人 SAMSUNG ELECTRONIC CO., LTD. 发明人 SHIN JUNG HAN;PARK JOON YONG;RYU MIN SEONG;SON YOUNG MOK;LEE SANG YOON
分类号 H01L21/00 主分类号 H01L21/00
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