发明名称 Method of forming refractory metal conductors of low resistivity
摘要 The resistivity of a conductor of a refractory metal such as molybdenum is reduced by converting at least a portion of the conductor into a layer of molybdenum nitride in an atmosphere including ammonia at a temperature in the range from about 400 DEG C. to about 850 DEG C. and thereafter heating the conductor in an atmosphere including dry hydrogen in the range from about 950 DEG C. to about 1000 DEG C. for a time to convert the layer of molybdenum nitride into molybdenum and to convert molybdenum oxides in the conductor into molybdenum.
申请公布号 US4471004(A) 申请公布日期 1984.09.11
申请号 US19830489613 申请日期 1983.04.28
申请人 GENERAL ELECTRIC COMPANY 发明人 KIM, MANJIN J.
分类号 C22B5/12;C22B34/34;C22B34/36;H01L21/321;(IPC1-7):B05D5/12;C23C11/00 主分类号 C22B5/12
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