SEMICONDUCTOR DEVICE HAVING FUSE STRUCTURE WITH INSULATING LAYER AND MANUFACTURING METHOD OF THE SAME

摘要

A semiconductor device and its manufacturing method are provided to simplify manufacturing processes, to reduce the size of device and to operate stably a fuse. An insulating layer(120) is formed on a semiconductor substrate(110). A first fuse electrode pattern(130) is formed on the insulating layer A second fuse electrode pattern(150) is formed on the insulating layer and the first fuse electrode pattern. An insulating fuse(140) is interposed between the first and second fuse electrode patterns. A first metal electrode is electrically connected with the first fuse electrode pattern. A second metal electrode is electrically connected with the second fuse electrode pattern. An insulating protection layer(180) is formed on the first and second fuse electrode patterns, the insulating fuse layer, and the first and second metal electrodes.