ORGANIC FILM CHEMICAL MECHANICAL POLISHING SLURRY, CHEMICAL MECHANICAL POLISHING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Provided is chemical mechanical polishing slurry, which ensures planarization of an organic film, inhibits scratch generation, reduces interconnection resistance, and imparts a high interconnection yield to a semiconductor fabricating process. The chemical mechanical polishing slurry comprises: polymer particles(17) having surface functionalities and a water-soluble polymer. The semiconductor fabricating process comprises the steps of: forming an insulation layer on a wafer; forming trenches in the insulation layer; forming a bottom layer, an intermediate layer and a resist layer successively on the insulation layer having trenches; exposing the resist layer to form a pattern. In the step of forming a bottom layer, an organic layer(9) is formed so that the trenches are embedded therein, and then the organic layer is subjected to chemical mechanical polishing using the slurry to perform planarization of the organic layer.