METHOD OF FORMING METAL IN SEMICONDUCTOR DEVICE

摘要

A method for forming a metal line of a semiconductor device is provided to perform stably an outgassing process and to acquire fine grains from aluminium by heating a substrate for a predetermined time under an Ar gas condition before an Al deposition. The temperature of a substrate is gradually increased to an aiming point(S11). A heating process is performed on the substrate in a chamber by suing a first argon gas(S13). A second argon gas is supplied to a rear surface of the substrate and a metal material is deposited on the substrate(S15). The aiming point of the substrate temperature is in a range of 380 to 400°C.