发明名称 RESIST COMPOSITION FOR EUV AND METHOD OF FORMING RESIST PATTERN
摘要 <p>A resist composition for EUV, characterized by comprising: a protected compound (A1) which is a polyhydric phenol compound (a) represented by the following general formula (I) in which part or all of the phenolic hydroxy groups have been protected by an acid-dissociable dissolution-inhibitive group; and an acid generator ingredient (B) which generates an acid upon exposure to light.</p>
申请公布号 KR20070057211(A) 申请公布日期 2007.06.04
申请号 KR20077007019 申请日期 2007.03.28
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 HADA HIDEO;HIRAYAMA TAKU;SHIONO DAIJU;WATANABE TAKEO;KINOSHITA HIROO
分类号 C07C39/15;C07C39/17;G03F7/032;H01L21/027 主分类号 C07C39/15
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