| 摘要 |
A TFT(Thin Film Transistor) array substrate and a method for manufacturing the same are provided to remove wavy noise due to a tail of a semiconductor layer generated during a 4-mask process, by covering a data line as well as the tail of the semiconductor layer with a transparent conductive layer so as to uniformly maintain parasitic capacitance between a pixel electrode and the data line. A gate line and a gate electrode are formed on a substrate(111). A gate insulating layer(113) is formed on the resultant substrate including the gate line. A data line(115) vertically crosses the gate line to define a unit pixel region. A source electrode(115a) and a drain electrode(115b) are formed above the gate electrode. A semiconductor layer(114) is formed below the data line, the source electrode, and the drain electrode. A passivation layer(116) is formed on the resultant substrate including the source electrode and the drain electrode. A pixel electrode(117) is formed on the passivation layer, and electrically contacted with the drain electrode. A cover conductive layer(117a) covers the data line and a portion of the semiconductor layer below the data line. |
