| 摘要 |
A nonvolatile semiconductor memory device and a writing method thereof are provided to suppress the increase of a threshold voltage due to the influence from an adjacent memory cell and to perform a stable read operation. A memory cell array(413) includes a memory cell having a nonvolatile transistor capable of electrically writing, erasing and reading information. A row selection circuit(411) selects the memory cell in a row direction. A column selection circuit(412) selects the memory cell in a column direction. And a control circuit controls writing to the memory cell selected by the column selection circuit and the row selection circuit by inputting an external command. The control circuit receives a first external write command and a second external write command, and performs threshold voltage control for writing the memory cell selected as a write target to a first threshold voltage when the first external write command is received, and performs threshold voltage control for writing the selected memory cell to a second threshold voltage when the second external write command is received.
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