| 摘要 |
An image sensor and its fabricating method are provided to improve the sensitivity on incident light by forming a microlens as an inner microlens and an outer microlens. Photodiodes(200) are formed on a semiconductor substrate(100), and an insulation layer and a passivation layer(330) are formed on the substrate. A first planarized photosensitive layer(350) is formed on the passivation layer, and has an inner microlens for focusing light incident on the photodiode. A color filter(400) is formed on the first planarized photosensitive layer. A second planarized photosensitive layer(500) is formed on the color filter, and an outer microlens(650) is formed on the second planarized photosensitive layer.
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