METHOD OF MONITORING PHOTORESIST'S RESISTANCE IN ION IMPLANTATION

摘要

A method of monitoring photoresist in an ion implantation process is provided to measure a degree of grating damage on a wafer by using a thermal wave apparatus. A thermal wave value of a bare wafer is measured before a photoresist coating process. Photoresist is coated on the bare wafer after the thermal wave value of the bare wafer is measured. An ion implantation process for the coated wafer is performed. A thermal wave value of the ion-implanted wafer is measured. The thermal wave value of the ion-implanted wafer is compared with the thermal wave value of the bare wafer in order to obtain a difference value therebetween.