| 摘要 |
A semiconductor device is provided to improve the degree of integration without the increase of the size of the semiconductor device itself. A multiple metal line structure composed of a first power source line, a second power source line and a first metal line is formed on a semiconductor substrate(30). A bonding pad is formed on the first and the second power source lines. A first conductor layer is electrically connected to the bonding pad on the first and the second power source lines. A protection element is electrically connected with the bonding pad on the substrate. The first and the second power source lines cross over the protection element. The first line is electrically connected with the protection element to form a withdraw region(24) of the first metal line between the first and the second power source lines. The first metal line is withdrawn from a predetermined portion over the first and the second power source lines in the withdraw region. |
