发明名称 APPARATUS FOR GENERATING REFERENCE VOLTAGE OF SEMICONDUCTOR MEMORY
摘要 An apparatus for generating a reference voltage of a semiconductor memory is provided to generate a constant reference voltage regardless of temperature variation and mismatch between devices, by adjusting output of a temperature-proportional voltage generation part and an output of a temperature-inversely proportional voltage generation part simultaneously or separately. An apparatus for generating a reference voltage of a semiconductor memory includes a temperature-proportional voltage generation part(10) and a temperature-inversely proportional voltage generation part(20). A reference voltage generation part(300) outputs a constant reference voltage regardless of temperature variation by adjusting the current intensity of the temperature-proportional voltage generation part or the temperature-inversely proportional voltage generation part according to a control signal.
申请公布号 KR20070056440(A) 申请公布日期 2007.06.04
申请号 KR20050115075 申请日期 2005.11.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, KI WON
分类号 G11C5/14 主分类号 G11C5/14
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