| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to enhance crystalline characteristics of polysilicon by using a buffer insulating layer with an aiming RMS(Root Mean Square). A semiconductor device includes a buffer insulating layer and a TFT(Thin Film Transistor). The buffer insulating layer(71) is formed on a semiconductor substrate(70). The RMS of the buffer insulating layer is in a range of 4.559 nm or less. The TFT is formed on the buffer insulating layer. The TFT includes an active layer. The active layer is made of a polysilicon layer, wherein the polysilicon layer is formed by using a solid phase crystallization.
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