发明名称 |
DIELECTRIC COMPONENT AND METHOD FOR PREPARING THE SAME |
摘要 |
A dielectric device and a manufacturing method thereof are provided to decrease a leak current density and to reduce fabrication costs by forming an electrode using a low oxidation temperature material. A first stacked structure is formed by forming a dielectric part(14) on a lower electrode(12). A first annealing process is performed on the first stacked structure. A second stacked structure is formed on the resultant structure by forming an upper electrode(16) on the dielectric part. A second annealing process is performed on the second stacked structure under a depression condition. The second annealing process is performed in a temperature range of 150 °C or more. The upper electrode is made of one or more selected from a group consisting of Cu, Ni, Al and Ag. |
申请公布号 |
KR20070056970(A) |
申请公布日期 |
2007.06.04 |
申请号 |
KR20060117538 |
申请日期 |
2006.11.27 |
申请人 |
TDK CORPORATION |
发明人 |
KATOH TOMOHIKO;HORINO KENJI |
分类号 |
H01L21/8242;H01G4/12;H01G4/232;H01G4/33;H01L27/04;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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