METHOD OF MANUFACTURING A SEMICONDUCTOR CAPACITOR

摘要

A method for manufacturing a semiconductor capacitor is provided to prevent the generation of short between adjacent lower electrodes by forming a spacer containing a metallic oxide at both upper sidewalls of each lower electrode. A mold layer with opening portions is formed on a semiconductor substrate(30). A lower electrode thin film is formed along an upper surface of the resultant structure. A sacrificial layer is formed thereon. A polishing process is performed on the resultant structure until the mold layer is exposed to the outside. An upper portion of the exposed mold layer is removed from the resultant structure to expose an upper sidewall of the lower electrode thin film. A thin film having a relatively high etch selectivity compared to the mold layer and sacrificial layer is formed. A spacer(72) is formed at both upper sidewalls of the lower electrode thin film by performing an etch back process on the resultant structure.