| 摘要 |
A TFT(Thin Film Transistor) and its manufacturing method are provided to prevent the contamination of an interface between first and second insulating layers and to increase the capacitance of a storage capacitor. A TFT includes an NMOS semiconductor layer and a PMOS semiconductor layer(40) on a substrate(10), a double gate insulating layer, and an NMOS gate electrode and a PMOS gate electrode. The double gate insulating layer is formed on the substrate including the semiconductor layers. The double gate insulating layer is composed of a first insulating layer(60a) and a second insulating layer(60b) on the first insulating layer. The NMOS and PMOS gate electrodes are formed on the second insulating layer.
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