| 摘要 |
A semiconductor device is provided to measure the degree of overlap without the cutting of a cross-section of the device and to prevent the slimming of a photoresist layer in a CD(Critical Dimension) measurement on a driving cell by using a monitoring pattern. A semiconductor device includes a main cell region(30) and a scribe lane region. The scribe lane region(31) is formed along a periphery of the main cell region. The scribe lane region has a predetermined width. A main cell line and a monitoring pattern(32) with the same space width as that of the main cell line are formed within the scribe lane region in order to evaluate the CD of the main cell and the degree of overlap.
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