| 摘要 |
<p>Bonding by molecular adhesion of two substrates to one another during which the surfaces of the substrates are placed in close contact and bonding occurs by propagation of a bonding front between the substrates, comprises prior to bonding, modifying the surface state of one and/or the other of the substrates to regulate the propagation speed of the bonding front by heating at 30-90, preferably 50-60[deg]C for 1-90, preferably 30 s. Independent claims are also included for: (1) a process for formation of a structure comprising a thin layer made of a semiconductor material on a support substrate, comprising placing a donor substrate in close contact with the support substrate to produce bonding by molecular adhesion of the substrates to one another following propagation of a bonding front between the substrates; and transfer of a part of the donor substrate to the support substrate to form the thin layer on the support substrate; and (2) an equipment for bonding by molecular adhesion of two substrates to one another following the propagation of a bonding front between the substrates, comprising a mechanism for modifying prior to bonding the surfaces the substrates.</p> |
