MEMORY DEVICE UTILIZING NANO-DOT AS TRAP SITE, AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a memory device utilizing nano-dots as a trap site, and a manufacturing method for the memory device. SOLUTION: The memory device incorporates a semiconductor substrate 20, and a gate structure which makes contact with a primary impurity region 21a and a secondary impurity region 22b both being formed on the semiconductor substrate 20 while formed on the semiconductor substrate 20. The gate structure includes a tunneling layer 22, many nano-dots 24 formed on the tunneling layer 22, and a control insulating layer formed on the tunneling layer 22 and the nano-dots 24, wherein the control insulating layer includes a high dielectric layer. COPYRIGHT: (C)2007,JPO&INPIT