发明名称 |
Semiconductor device comprising a pn-heterojunction |
摘要 |
An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor body ( 1 ) and has a first conductivity type, the semiconductor body ( 1 ) has a second conductivity type opposite to the first conductivity type, the nanowire ( 3 ) forming with the semiconductor body ( 1 ) a pn-heterojunction ( 4 ). The nanowire of III-V semiconductor material can be used as a diffusion source ( 5 ) of dopant atoms into the semiconductor body. The diffused group III atoms and/or the group V atoms from the III-V material are the dopant atoms forming a region ( 6 ) in the semiconductor body in direct contact with the nanowire ( 3 ).
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申请公布号 |
US2007120254(A1) |
申请公布日期 |
2007.05.31 |
申请号 |
US20040584038 |
申请日期 |
2004.12.20 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.C. |
发明人 |
HURKX GODEFRIDUS A.M.;AGARWAL PRABHAT;BALKENENDE ABRAHAM R.;MAGNEE PETRUS HUBERTUS C.;WAGEMANS MELANIE M.H.;BAKKERS ERIK PETRUS ANTONIUS M.;HIJZEN ERWIN A. |
分类号 |
H01L23/48;H01L21/225;H01L21/329;H01L29/04;H01L29/06;H01L29/20;H01L29/861 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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