| 发明名称 |
Semiconductor device having high frequency components and manufacturing method thereof |
| 摘要 |
A transistor is located on a GaAs substrate. An air bridge extends to provide a cavity above gate electrodes of the transistor. An opening is sealed by the end ball of a second wire. Further, the semiconductor device is wholly covered by sealing resin.
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| 申请公布号 |
US2007123026(A1) |
申请公布日期 |
2007.05.31 |
| 申请号 |
US20060487503 |
申请日期 |
2006.07.17 |
| 申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
AIHARA YASUKI |
| 分类号 |
H01L21/4763;H01L23/48;H01L23/52 |
主分类号 |
H01L21/4763 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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