Semiconductor component and production process has source-drain region with gate electrode and intermetallic dielectric layer of damascene structure with barrier and metallic cover layers

摘要

A semiconductor component comprises a semiconductor substrate (100) comprising a source/drain region (90) on which are a gate electrode (70), an intermetallic dielectric layer (110) having a damascene structure, a barrier layer (125), a metallic conductor (130) and a metallic cover layer (140) in the damascene structure. An independent claim is also included for a production process for the above.