发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
<p>By preventing scattering of small pieces having irregular shapes produced upon dicing, it is possible to improve the fabrication yield of semiconductor devices. Among a plurality of dicing lines, for dicing lines that could cut irregular-shaped outer circumference portions, the formation of the dicing lines is started from the outside of a semiconductor wafer to cut halfway across the semiconductor wafer and is terminated before reaching the irregular-shaped outer circumference portions formed in the periphery of the semiconductor wafer. For the other dicing lines, their formation is started from the outside of the semiconductor wafer to cut the semiconductor wafer, and is terminated at the outside of the semiconductor wafer.</p> |
申请公布号 |
WO2007060724(A1) |
申请公布日期 |
2007.05.31 |
申请号 |
WO2005JP21605 |
申请日期 |
2005.11.24 |
申请人 |
RENESAS TECHNOLOGY CORP.;YUI, HAJIME;MURAMATSU, HISASHI |
发明人 |
YUI, HAJIME;MURAMATSU, HISASHI |
分类号 |
H01L21/301 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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