发明名称 PLASMA GENERATING DEVICE WITH OVERVOLTAGE SUPPRESSION ON THE TRANSISTOR TERMINALS OF A HIGH-VOLTAGE PSEUDOCLASS E GENERATOR
摘要 A plasma generating device comprises a plasma-generating plug provided with a capacitive inductive resonator (RS2) for producing high voltage and means (OSC) which are used for generating a high-frequency control pulse sequence and a voltage (GENI) and comprise a switching transistor (MI), whose control electrode is connected to the generating means output and to an output (D) for delivering a voltage pulse sequence to the resonator in response to the control pulses received on the switching transistor control electrode. The inventive device also comprises means (D1) which are connected between the two conductor electrodes of the switching transistor and are used for limiting the voltage difference between two other electrodes.
申请公布号 WO2007060362(A1) 申请公布日期 2007.05.31
申请号 WO2006FR51199 申请日期 2006.11.20
申请人 RENAULT S.A.S;AGNERAY, ANDRE;MALEK, NADIM 发明人 AGNERAY, ANDRE;MALEK, NADIM
分类号 H02M9/02;H02H9/04;H02M7/523 主分类号 H02M9/02
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