LARGE AREA SEMICONDUCTOR ON GLASS INSULATOR

摘要

Methods and apparatus provide for contacting respective first surfaces of a plurality of donor semiconductor wafers with a glass substrate; bonding the first surfaces of the plurality of donor semiconductor wafers to the glass substrate using electrolysis; separating the plurality of donor semiconductor wafers from the glass substrate leaving respective exfoliation layers bonded to the glass substrate; and depositing a further semiconductor layer on exposed surfaces of the exfoliation layers to augment a thickness of the exfoliation layers.