发明名称 LIGHT EMITTING DIODE
摘要 A SEMI-CONDUCTOR LIGHT EMITTING DIODE INCLUDES CLOSELY SPACED N AND P ELECTRODES FORMED ON THE SAME SIDE OF A SUBSTRATE (100) TO FORM AN LED WITH A SMALL FOOT-PRINT. A SEMITRANSPARENT U SHAPED P CONTACT LAYER (102) IS FORMED ALONG THREE SIDES OF THE TOP SURFACE OF THE UNDERLYING WINDOW LAYER (101). THE P ELECTRODE IS FORMED ON THE P CONTACT LAYER (102) CENTERED ON THE CLOSED END OF THE U SHAPED LAYER. AN N CONTACT LAYER (105) IS FORMED ON AN N CLADDING LAYER (203) AND CENTERED IN THE OPEN END OF THE U OF THE P CONTACT LAYER. THE N ELECTRODE IS FORMED ON THE N CONTACT LAYER. THE N AND P ELECTRODES ARE ELECTRICALLY ISOLATED FROM ONE ANOTHER BY EITHER A TRENCH (107) OR AN INSULATOR, SITUATED BETWEEN THE ELECTRODES.(FIG 1)
申请公布号 MY129907(A) 申请公布日期 2007.05.31
申请号 MYPI20032375 申请日期 2003.06.25
申请人 DALIAN MEIMING EPITAXY TECHNOLOGY CO., LTD. 发明人 LIU, HENG;CHEN, CHANGHUA
分类号 H01L27/15 主分类号 H01L27/15
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