| 摘要 |
PROBLEM TO BE SOLVED: To provide an embedding method inside a trench for reducing damage of a porous silica material embedded in a trench and a hole in a process such as etching. SOLUTION: Wiring is formed inside a structure with respect to a semiconductor substrate where the structure formed of the trench is installed having an opening in a size of 50 to 5,000 nm and of the hole. Solution of prescribed viscosity contains a precursor of a hydrophobic porous silica material, and is applied onto the substrate. Hydrolysis and baking are performed. The inner part of the structure where wiring is formed is filled with the hydrophobic porous silica material. COPYRIGHT: (C)2007,JPO&INPIT
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