| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which a transistor of such a structure as having a large gate width and preventing formation of a parasitic channel can be fabricated. SOLUTION: An SiGe layer 3 is formed on an Si substrate 1, and an Si layer 5 is formed on the SiGe layer 3. A hole h for exposing the Si substrate 1 is formed in the Si layer 5 and the SiGe layer 3, and a support 7 for supporting the Si layer 5 on the Si substrate 1 is formed on the Si substrate 1 to cover the Si layer 5 while filling the hole h. Subsequently, the support 7, the Si layer 5 and the SiGe layer 3 are etched sequentially and selectively to form an opening surface H for exposing the side face of the SiGe layer 3 under the support 7. Thereafter, boron for preventing parasitic channel is introduced into the Si layer 5 at the channel region end of the transistor by oblique ion implantation, for example. Finally, the SiGe layer 3 is etched through the opening surface H to form a cavity between the Si layer 5 and the Si substrate 1 and a thermal oxidation film is formed in the cavity. COPYRIGHT: (C)2007,JPO&INPIT
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