发明名称 |
HYBRID CRYSTALLOGRAPHIC SURFACE ORIENTATION |
摘要 |
A substrate for a semiconductor device is disclosed including, in one embodiment, a plurality of semiconductor-on-insulator (SOI) wafers bonded to one another in a single stack. A distal end of the stack includes a first SOI region with a first semiconductor layer having a thickness and a first surface orientation. A surface of the single stack may further include a non-SOI region and/or at least one second SOI region. The non-SOI region may include bulk silicon that extends through all of the insulator layers of the single stack and has a thickness different than that of the first silicon layer. Each second SOI region has a second semiconductor layer having a thickness different than that of the first semiconductor layer and/or a different surface orientation than the first surface orientation. The substrate thus allows formation of different devices on optimal substrate regions that may include different surface orientations and/or different thicknesses and/or different bulk or SOI structures.
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申请公布号 |
US2007122634(A1) |
申请公布日期 |
2007.05.31 |
申请号 |
US20050164345 |
申请日期 |
2005.11.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LEE JUNEDONG;SADANA DEVENDRA K.;SCHEPIS DOMINIC J.;SHAHIDI GHAVAM G. |
分类号 |
B32B13/04;B05D5/12 |
主分类号 |
B32B13/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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