发明名称 |
SONOS type non-volatile memory devices having a laminate blocking insulation layer and methods of manufacturing the same |
摘要 |
A SONOS type non-volatile memory device includes a substrate having source/drain regions doped with impurities and a channel region between the source/drain regions. A tunnel insulation layer including silicon oxide is formed on the channel region of the substrate. A charge-trapping insulation layer including silicon nitride is formed on the tunnel insulation layer. A blocking insulation layer is formed on the charge-trapping insulation layer. The blocking insulation layer has a laminate layered structure in which a plurality of layers, at least one of which includes a metal oxide layer, are sequentially stacked. An electrode is formed on the blocking insulation layer.
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申请公布号 |
US2007120179(A1) |
申请公布日期 |
2007.05.31 |
申请号 |
US20060505033 |
申请日期 |
2006.08.16 |
申请人 |
PARK HONG-BAE;SHIN YU-GYUN |
发明人 |
PARK HONG-BAE;SHIN YU-GYUN |
分类号 |
H01L29/792;H01L21/336 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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