| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the VF of a diode does not increase, in which a recovery current is also be made low, and which includes an IGBT and a diode. <P>SOLUTION: The semiconductor device includes: a first conductive semiconductor substrate; a first conductive semiconductor layer formed in the primary main surface side of a semiconductor substrate; a second conductive base layer formed in the primary main surface side of the semiconductor layer and isolated by the semiconductor layer between the semiconductor substrates; one pair of trenches formed so that it penetrates the base layer from the primary principal plane and reaches at least the semiconductor layer; an insulating film provided in the interior of the trench; a gate electrode formed in the trench through an insulating layer; a first conductive semiconductor layer and a second conductive semiconductor layer formed in the second main surface side of the semiconductor substrate; and an emitter region provided in the first main surface side of the base layer along with the trench. The semiconductor device also has: a transistor for controlling the current flowing through the base layer; and a diode. The emitter region is provided only in the region inserted into one pair of the trenches. <P>COPYRIGHT: (C)2007,JPO&INPIT |
