| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of forming a delicate wiring structure by suppressing resist poisoning. <P>SOLUTION: A cap layer 12, a first interlayer insulating film 13, an etching stopper layer 14, a second interlayer insulating film 15, a hard mask layer 16, and another hard mask layer 18, are sequentially formed on a wiring layer 11. The first and/or second interlayer insulating films 13, 15 are formed of a low-k material. Next, a via hole 19a is formed for exposing the surface of the cap layer 12. Subsequently, the via hole 19a is filled with an embedding material 21a consisting of a resin containing oxygen generating agent or a chemical-amplifying resist material, for example. Subsequently, energy ray is irradiated against the embedding material 21a to generate an acid substance and neutralize an alkali substance, occluded in the first and second interlayer films 13, 15, by the acid substance of the embedding material 21a. <P>COPYRIGHT: (C)2007,JPO&INPIT |
