| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device wherein a noise and a power loss are both small during data reading and data writing, and also to provide its driving method. SOLUTION: The semiconductor memory device 100 includes: a memory cell MC for storing data on the basis of the number of multiple carriers (the number of holes) in a floating body; word lines WLL0 to WLL255; a data bit line BLL for transmitting the data of the memory cell; a reference bit line BBLL for transmitting a reference voltage; a data sensor node SN for detecting the data of the memory cell; a reference sense node BSN connected to the reference bit to detect a reference voltage; transfer gates TGL1 and TGL2 connected between the reference bit line and the reference sense node; and a current load circuit CMC connected to the data sense node and the reference sense node and constituted of the same conductive transistor as that of the memory cell. COPYRIGHT: (C)2007,JPO&INPIT
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