Multi-bit memory element and production process has U-shaped trench structure with conductive region and insulating region containing at least two floating gates

摘要

A multi-bit memory element comprise a trench structure comprising an electrically conductive region (102) on which is an insulating region (103) in or on which are at least two floating gate regions (104a,104b) that are electrically isolated from one another and from the electrically conductive region. Preferably the trench is U-shaped with a curved base region and the insulating region comprises many insulating parts (103a,103b). An independent claim is also included for a production process for the above.