| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device offering superior large power and high-frequency characteristics, which semiconductor device has the extension structure of electrode leads that reduces on-resistance and inductance after module mounting of a large-sized semiconductor chip, and to avoids a bad effect on a safe operation area and frequency characteristics. <P>SOLUTION: The resin-sealed module semiconductor device has a semiconductor chip 1. In the device, a copper radiation board 31 is provided with a copper material layer 19 glued thereto, which copper material layer 19 is covered with copper at both sides, and disposed on the undersurface of a nitrogen silicon board 11 whose upper surface is divided via insulating partitions into three areas consisting of a gate electrode island 13, a source electrode island 12, and a drain electrode island 16; and with an electrode foil plate 21 which is connected to the source electrode island 12 on the upper surface of the board 11, and is extended to the vicinity of a group of source electrode pads S1 to S4. The source electrode pads S1 to S4 and the electrode foil plate 21 are connected via electric leads 41 having a length half or less than half of that of the short side of the semiconductor chip 1, and are sealed with a resin. <P>COPYRIGHT: (C)2007,JPO&INPIT |
