| 摘要 |
PURPOSE:To utilize magnetron discharge for etching a substrate quickly, by arranging a magnetic applying means such as a magnetic field generator on the back side of an electrode facing to another electrode on which the substrate is carried. CONSTITUTION:A magnetic field generator 19 with permanent magnet arranged in the order of NSNS is mounted near the top face of a second electrode 12 outside a container 10. The magnetic field generator 19 for forming a predetermined magnetic field between first and second electrodes 11 and 12 through the second electrode 12 is moved reciprocally in the directions along the second electrode 12 as indicated by arrows P by means of a moving mechanism 20. A predetermined gas is supplied into the container 10 so as to keep a pressure within the container 10 at a predetermined level. Meanwhile, a high-frequency voltage is applied between the electrode 11 and 12 and the magnetic field generator 19 is moved reciprocally. In this manner, uniform plasma with a high density can be produced over a substrate to be etched 13 and, therefore, the substrate 13 can be etched uniformly and quickly.
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