HARDMASK COMPOSITION COATED UNDER PHOTORESIST AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING THEREOF

摘要

Provided are a hardmask composition for a resist underlayer film, which optimizes the refractive index and adsorption of a hardmask, shows effective anti-reflection and therefore ensures margins in process of lithography, and a process for producing an integrated circuit device by using the same. The hardmask composition for a resist underlayer film comprises (a) a polymer which is produced from a compound represented by the formula(1) and a compound represented by the formula(2), or alternatively a polymer which contains 10-99 mol% of a repeating unit represented by the formula(4) and 1-90 mol% of at least one of a repeating unit represented by the formula(5) and a repeating unit represented by the formula(6), based on the total amount of a silicon-containing unit in the polymer, (b) at least any one of compounds represented by the formula(3), (c) an acidic or basic catalyst and (d) an organic solvent.