| 摘要 |
<P>PROBLEM TO BE SOLVED: To clarify anisotropy related to the current diffusion of an element on the side of an n-type layer in horizontal direction that is caused by the irregularity of a processing substrate as well as its relationship with Vf of an LED, to optimize the structure of each part for the anisotropy, and to reduce the Vf. <P>SOLUTION: An n-type nitride semiconductor layer (n-type layer) doped with n-type impurity is formed on a substrate which is made of an insulator and is provided with an uneven crystal growth surface, and a light emitter and an n-type ohmic electrode P1 are formed thereon. When viewed from the upper side of the substrate; the electrode P1 is formed in an area surrounded by a straight line including a side EF of a square EFGH circumscribing the light emitter, and by a straight line including a side GH so that a distance between the electrode P1 and the side HE may be larger than those between the electrode P1 and the other three sides. The recess is extended on the crystal growth surface in a direction orthogonally crossing the side HE. Thus, the current diffusion in the horizontal direction in the n-type layer is made more appropriate in the direction than other directions, and Vf is reduced. <P>COPYRIGHT: (C)2007,JPO&INPIT |
