| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory element using a nanotube. SOLUTION: The non-volatile memory element comprises a substrate, at least two first and second electrodes arranged on the substrate with a certain interval from each other, a conductive nanotube which is provided between the electrodes and selectively brought into contact with the first electrode or the second electrode by an electrostatic force, and a supporting table supporting the conductive nanotube. This memory element is the non-volatile memory element in which erasing is basically possible and maintenance of information is possible even in a non-power state, and high operational speed and high integration degree are realized. Further, since erasing by bit is possible, field of application of the element is wide. COPYRIGHT: (C)2007,JPO&INPIT |
